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FDH45N50F Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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FDH45N50F Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() ISF1058 eq FDH45N50F N-Channel MOSFET www.iscsemi.com 1 FEATURES ·Drain Current -ID= 45A@ TC=25℃ ·Drain Source Voltage -VDSS= 500V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 120mΩ(Max)@VGS= 10V APPLICATIONS · Lighting · Uninterruptible Power Supply · AC-DC Power Supply Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage ± 30 V ID Drain Current-Continuous @Tc=25℃ Tc=100℃ 45 28.4 A IDM Drain Current-Single Pulsed 180 A PD Total Dissipation @TC=25℃ 625 W Tch Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(ch-c) Channel-to-case thermal resistance 0.2 ℃ /W Rth(ch-a) Channel-to-ambient thermal resistance 40 ℃ /W |
Ähnliche Teilenummer - FDH45N50F |
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Ähnliche Beschreibung - FDH45N50F |
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