M29F800DB datasheet(21/53 Pages) STMICROELECTRONICS

21 / 53 page

M29F800DT

Command Interface

21/53

Table 5.

Commands, 8-bit mode, BYTE = VIL

(1)

Command

Bus Write operations

1st

2nd

3rd

4th

5th

6th

Addr Data Addr Data Addr Data Addr Data Addr Data Addr Data

Read/Reset

AAA

555

Auto Select

AAA

555

AAA

Program

AAA

555

AAA

Unlock Bypass

AAA

555

AAA

Unlock Bypass

Program

Unlock Bypass Reset

Chip Erase

AAA

555

AAA

555

AAA

Block Erase

AAA

555

AAA

555

Erase Suspend

Erase Resume

Read CFI Query

X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in

hexadecimal. The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A18, DQ8-

DQ14 and DQ15 are Don’t Care. DQ15A–1 is A–1 when BYTE is VIL or DQ15 when BYTE is VIH.

Table 6.

Program, Erase times and Program, Erase Endurance cycles

Parameter

Min

Typ(1)(2)

Max(2)

Unit

Chip Erase

60(3)

Block Erase (64 Kbytes)

0.8

6(4)

Erase Suspend Latency time

µs

Program (Byte or Word)

200(3)

µs

Chip Program (Byte by Byte)

60(3)

Chip Program (Word by Word)

30(3)

Program/Erase cycles (per Block)

100,000

cycles

Data Retention

years

Typical values measured at room temperature and nominal voltages.

Sampled, but not 100% tested.

Maximum value measured at worst case conditions for both temperature and VCC after 100,00 program/erase cycles.

Maximum value measured at worst case conditions for both temperature and VCC.

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