Silicon NPN Power Transistor

KSH3055

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO

Collector-Emitter Breakdown Voltage

IC= 30mA; IB= 0

60

--

--

V

VCE(sat)-1*

Collector-Emitter Saturation Voltage

IC= 4A; IB= 0.4A

--

--

1.1

V

VCE(sat)-2*

Collector-Emitter Saturation Voltage

IC= 10A; IB= 3.3A

--

--

8

V

VBE(on)*

Base-Emitter On Voltage

IC= 4A; VCE=4V

--

--

1.8

V

ICBO

Collector Cutoff Current

VCB= 70V; IE= 0

--

--

2

mA

ICEO

Collector Cutoff Current

VCE= 30V; IB= 0

--

--

50

uA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

--

--

0.5

mA

hFE1*

DC Current Gain

IC= 4A; VCE= 4V

20

--

100

hFE2*

DC Current Gain

IC= 10A; VCE= 4V

5

--

--

fT

Current-Gain—Bandwidth Product

IC= 0.5A; VCE= 10V

2

--

--

MHz

PRODUCT DISCLAIMER

ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

ISC products are intended for usage in general electronic equipment. The products are not designed for

use in equipment which require specialized quality and/or reliability, or in equipment which could have

applications in hazardous environments, aerospace industry, or medical field. Please contact us if you

intend our products to be used in these special applications.

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nor does ISC assume any liability arising from the application or use of any products, and specifically

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