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MD1803DFX Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer MD1803DFX
Bauteilbeschribung  Silicon NPN Power Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

MD1803DFX Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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Silicon NPN Power Transistor
MD1803DFX
www.iscsemi.com
1
DESCRIPTION
· High Voltage
· Low base-drive requirements
· Collector-Emitter Sustaining Voltage-
:VCEO(SUS)= 700V (Min)
APPLICATIONS
· Horizontal deflection output for TV
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCEO
Collector-Emitter Voltage
700
V
VEBO
Emitter-Base Voltage
10
V
IC
Collector Current- Continuous
10
A
ICM
Collector peak current (tp<5ms)
15
A
IB
Base Current- Continuous
5
A
PD
Total dissipation at TC=25℃
57
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
2.2
℃
/W


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