MJD148 datasheet(1/2 Pages) ISC

Teilenummer	MJD148

Bauteilbeschribung	Silicon NPN Power Transistor

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Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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Silicon NPN Power Transistor

MJD148

www.iscsemi.com

1

DESCRIPTION

· Collector-Emitter Breakdown Voltage

-V(BR)CEO= 45V(Min)

· Collector-Emitter Saturation Voltage

-VCE(sat):= 0.5V(Max) @IC= 2A

APPLICATIONS

· Designed for use in general purpose amplifer and low

Speed switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

45

V

VCEO

Collector-Emitter Voltage

45

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

4

A

ICM

Collector Current-Peak

7

A

IB

Base Current

50

mA

PC

Collector Power Dissipation

Ta=25℃

1.75

W

Collector Power Dissipation

TC=25℃

20

Ti

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance,Junction to Case

6.25

℃

/W

Rth j-a

Thermal Resistance,Junction to

Ambient

71.4

℃

/W

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