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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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KSH30C Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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KSH30C Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  Silicon PNP Power Transistor KSH30C www.iscsemi.com 1 DESCRIPTION · Collector-Emitter Breakdown Voltage -V(BR)CEO= -100V(Min) · Collector-Emitter Saturation Voltage -VCE(sat):= -0.7V(Max) @IC= -1A APPLICATIONS · Low frequency amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A ICP Collector Current (Pulse) -3 A PC Collector Power Dissipation @ TC=25℃ 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2 |
Ähnliche Teilenummer - KSH30C |
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Ähnliche Beschreibung - KSH30C |
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