 |
Datenblatt-Suchmaschine für elektronische Bauteile |
|
|
Datenblatt-Suchmaschine für elektronische Bauteile |
|
2SA1700-252 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
|
|
|||||||||||||||||||||||||||||
2SA1700-252 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
|
|
1 / 3 page  Silicon PNP Power Transistor 2SA1700 www.iscsemi.com 1 DESCRIPTION · High breakdown voltage · Low Collector-Emitter Saturation Voltage · High Power Dissipation- : PC= 10W@TC=25℃,PC= 10W@Ta=25℃ · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · For high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -0.2 A ICM Collector Current-Peak -0.4 A PC Collector Power Dissipation @ TC=25℃ 10 W Collector Power Dissipation @Ta=25℃ 1.0 TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Ähnliche Teilenummer - 2SA1700-252 |
|
Ähnliche Beschreibung - 2SA1700-252 |
|
|
|
Link URL |
| War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Link zum Datenblatt | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |
German ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
