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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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2SA1875-252 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SA1875-252 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  Silicon PNP Power Transistor 2SA1875 www.iscsemi.com 1 DESCRIPTION · Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) · DC Current Gain- : hFE= 60(Min)@ IC= -50mA · Fast switching speed · Large current capacity APPLICATIONS · Power amplifier applications · Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -200 V VEBO Emitter-Base Voltage -3 V IC Collector Current-Continuous -0.3 A ICP Collector Current-Continuous Pulse -0.6 A PC Total Power Dissipation @ TC=25℃ 12 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Ähnliche Teilenummer - 2SA1875-252 |
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Ähnliche Beschreibung - 2SA1875-252 |
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