| Datenblatt-Suchmaschine für elektronische Bauteile |
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2SA1875 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA1875 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Silicon PNP Power Transistor 2SA1875 www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNI T V(BR)EBO Emitter-Base Breakdown Voltage IE=-0.1mA,IC=0 -3 -- -- V V (BR)CEO Collector-Emitter Breakdown Voltage IC=-1mA, IB=0 -200 -- -- V V(BR)CBO Collector-Base Breakdown Voltage IC=-0.1mA ,IE=0 -200 -- -- V VCE(sat) Collector-Emitter Saturation Voltage IC= -50mA; IB= -5mA -- -- -1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= -50mA; IB= -5mA -- -- -1.0 V ICBO Collector Cutoff Current VCB= -150V; IE= 0 -- -- -0.1 μ A IEBO Emitter Cutoff Current VEB= -2V; IC=0 -- -- -1 μ A hFE DC Current Gain IC= -50mA; VCE= -10V 60 -- 320 hFE DC Current Gain IC= -250mA; VCE= -10V 20 -- -- fT Transition frequency VCE=-10V ,IC=-100mA -- 400 -- MHz Cob Collector output capacitance VCB=-30V ,IE=0,f=1MHz -- 4.2 -- pF hFE Classifications D E F 60-120 100-200 160-320 |
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