| Datenblatt-Suchmaschine für elektronische Bauteile |
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2SA2040 Datenblatt(PDF) 2 Page - Inchange Semiconductor Company Limited |
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2SA2040 Datenblatt(HTML) 2 Page - Inchange Semiconductor Company Limited |
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2 / 3 page ![]() Silicon PNP Power Transistor 2SA2040 www.iscsemi.com 2 ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified) SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -3.5A; IB= -175mA -0.390 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -2.0A; IB= -40mA -0.4 V VBE(sat) Base-Emitter Saturation Voltage IC= -2.0A; IB= -40mA -1.2 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA; IB= 0 -50 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -10uA; IC= 0 -6 V ICBO Collector Cutoff Current VCB= -40V; IE= 0 -0.1 μ A IEBO Emitter Cutoff Current VEB= -4V; IC= 0 -0.1 μ A hFE DC Current Gain IC= -0.5A; VCE= -2V 200 560 COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz 50 pF fT Current-Gain—Bandwidth Product IC= -500mA; VCE= -10V 290 MHz |
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