Silicon PNP Power Transistor

2SB908

www.iscsemi.com

2

ELECTRICAL CHARACTERISTICS （TC=25℃ unless otherwise specified）

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP

MAX

UNIT

V (BR)CEO

Collector-Emitter Breakdown Voltage

IC=-10mA, IB=0A

-80

--

--

V

VCE(sat)

Collector-Emitter Saturation Voltage

IC= -3A; IB= -6mA

--

--

-1.5

V

VBE(sat)

Base-emitter saturation voltage

IC= -3A; IB= -6mA

--

--

-2.0

V

ICBO

Collector Cutoff Current

VCB= -100V; IE= 0A

--

--

-20

μ

A

IEBO

Emitter cut-off current

VEB= -5V; IC= 0A

--

--

-2.5

mA

hFE

DC Current Gain

IC= -1A; VCE= -2V

2000

--

--

hFE

DC Current Gain

IC= -3A; VCE= -2V

1000

--

--

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ISC reserves the rights to make changes of the content herein the datasheet at any time without

notification. The information contained herein is presented only as a guide for the applications of our

products.

ISC products are intended for usage in general electronic equipment. The products are not designed for

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