2SC2983-252 datasheet(1/3 Pages) ISC

Teilenummer	2SC2983-252

Bauteilbeschribung	Silicon NPN Power Transistor

PDF	3 Pages

Scroll/Zoom	100%

Hersteller	ISC [Inchange Semiconductor Company Limited]

Direct Link	http://www.iscsemi.cn

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1 / 3 page

Silicon NPN Power Transistor

2SC2983

www.iscsemi.com

1

DESCRIPTION

·

Excellent linearity of hFE

·

Low collector-to-emitter saturation voltage

·

Fast switching speed

APPLICATIONS

·

Designed for power amplifier and driver stage amplifier

applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCBO

Collector-Base Voltage

160

V

VCEO

Collector-Emitter Voltage

160

V

VEBO

Emitter-Base Voltage

5

V

IC

Collector Current-Continuous

1.5

A

IB

Base Current-Continuous

0.3

A

PC

Collector Power Dissipation

15

W

TJ

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

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