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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IXFN180N10 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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IXFN180N10 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page  ISFM1173 eq IXFN180N10 N-Channel MOSFET Transistor www.iscsemi.com 1 FEATURES · Drain Current -ID= 180A@ TC=25℃ · Drain Source Voltage -VDSS= 100V(Min) · Static Drain-Source On-Resistance -RDS(on) = 8mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · Synchronous Rectification · Low Voltage relays · Battery Chargers Absolute Maximum Ratings(TC=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current-Continuous 180 A IDM Drain Current-Single Pulse 720 A PD Total Dissipation @TC=25℃ 600 W TJ Max. Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.21 ℃ /W |
Ähnliche Teilenummer - IXFN180N10 |
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Ähnliche Beschreibung - IXFN180N10 |
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