Features

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Ultra Broad Bandwidth: 50 MHz to 26 GHz

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1.0 dB Insertion Loss, 30 dB Isolation at 20 GHz

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Reliable. Fully Monolithic, Glass Encapsulated

Construction

Description

The MA4SW510 is a SP5T Series-Shunt broad band switch

made with M/A-COM’s HMIC

Integrated Circuit) process, US Patent 5,268,310. This

process allows the incorporation of silicon pedestals that

form series and shunt diodes or vias by imbedding them in a

low loss, low dispersion glass. This hybrid combination of

Silicon and Glass gives HMIC Switches exceptional low

loss

and

remarkable

high

isolation

through

low

millimeter-wave frequencies.

Applications

These high performance switches are suitable for the use in

multi-band ECM, Radar, and instrumentation control

circuits where high isolation to insertion loss ratios are

required. With a standard +5 V/-5 V, TTL controlled PIN

diode driver, 50 ns switching speeds are achieved.

SP5T PIN Diode

Reflective Switch

V 2.00

MA4SW510 Layout

Parameter

Value

Operating Temperature

-65 °C to +150 °C

Storage Temperature

65 °C to +175 °C

RF C.W. Incident Power

(+/-20 mA)

+ 30 dBm

DC Bias Current (Forward)

+/-50 mA

Applied Voltage (Reverse)

25 V

Absolute Maximum Ratings

1

@ TA = +25 °C (unless otherwise

specified)

1. Exceeding any of these values may result in permanent

damage

Nominal Chip Dimensions

Chip Dimensions (

µm)

X

Y

Chip

1730

1480

Pad Dimensions (

µm)

X

Y

RF

120

120

Pad Locations (

µm)

X

Y

J1

0

0

J2

-750

0

J3

-750

+825

J4

0

+1240

J5

-750

+825

J6

+750

0

Pad Locations Relative to J1