■

Features

●

Ultra low on-resistance.

●

P-Channel MOSFET.

●

SOT-23 Footprint.

●

Low profile(＜1.1mm).

●

Available in tape and reel.

●

Fast switching.

■

Absolute Maximum Ratings Ta = 25℃

Parameter

Symbol

Rating

Unit

Drain-Source Voltage

VDS

-20

Gate-Source Voltage

VGS

±

12

Continuous Drain Current VGS=4.5V @ TA=25℃

-3.7

Continuous Drain Current VGS=4.5V@ TA=70℃

-2.2

Pulsed Drain Current

a

IDM

-30

Power Dissipation

@ TA=25℃

PD

1.3

Power Dissipation

@ TA=70℃

0.8

Single Pulse Avalanche Energy

b

EAS

11

mJ

Thermal Resistance.Junction- to-Ambient

RthJA

100

℃

/W

Linera Derating Factor

0.01

W/℃

Junction Temperature

TJ

150

Junction and Storage Temperature Range

Tstg

-55 to 150

℃

V

ID

A

W

b.Starting TJ=25℃, L=1.65mH, RG=25Ω, IAS=-3.7A

a.Repetitive Rating :Pulse width limited by maximum junction temperature

Notes:

IRLML6402

P-Channel Enhancement MOSFET

1

2

3

■

Simplified outline(SOT-23)

1. Gate

2. Source

3. Drain

1

S

D

G

Rev:2022A2