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IPDD60R180CM8 Datenblatt(PDF) 4 Page - Infineon Technologies AG |
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IPDD60R180CM8 Datenblatt(HTML) 4 Page - Infineon Technologies AG |
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4 / 14 page ![]() 4 600VCoolMOSªCM8PowerTransistor IPDD60R180CM8 Rev.2.1,2024-03-21 Final Data Sheet 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 0.74 K/W - Thermal resistance, junction - ambient RthJA - - 62 K/W device on PCB, minimal footprint Thermal resistance, junction - ambient for SMD version RthJA - 55 60 K/W Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70µm thickness) copper area. Tap exposed to air. PCB is vertical without air stream cooling. Soldering temperature, reflow soldering allowed Tsold - - 260 °C reflow MSL1 |
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