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PMLL4148 Datenblatt(PDF) 3 Page - NXP Semiconductors |
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PMLL4148 Datenblatt(HTML) 3 Page - NXP Semiconductors |
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3 / 8 page ![]() 1999 May 27 3 Philips Semiconductors Product specification High-speed diodes PMLL4148; PMLL4448 ELECTRICAL CHARACTERISTICS Tj =25 °C unless otherwise specified. THERMAL CHARACTERISTICS Note 1. Device mounted on an FR4 printed-circuit board. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VF forward voltage see Fig.3 PMLL4148 IF =10mA − 1V PMLL4448 IF = 5 mA 620 720 mV IF = 100 mA − 1V IR reverse current VR = 20 V; see Fig.5 25 nA VR = 20 V; Tj = 150 °C; see Fig.5 − 50 µA IR reverse current; PMLL4448 VR = 20 V; Tj = 100 °C; see Fig.5 − 3 µA Cd diode capacitance f = 1 MHz; VR = 0; see Fig.6 4 pF trr reverse recovery time when switched from IF = 10 mA to IR = 60 mA; RL = 100 Ω; measured at IR = 1 mA; see Fig.7 4ns Vfr forward recovery voltage when switched from IF =50mA; tr = 20 ns; see Fig.8 − 2.5 V SYMBOL PARAMETER CONDITIONS VALUE UNIT Rth j-tp thermal resistance from junction to tie-point 300 K/W Rth j-a thermal resistance from junction to ambient note 1 350 K/W |
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