NXP Semiconductors

A5M20TG042

Airfast Power Amplifier Module

A5M20TG042

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Product data sheet

Rev. 1 — 20 May 2024

7 / 21

13.3 Functional tests

Table 12. Functional tests — 1805 MHz

(In NXP production test fixture, TA = 25°C unless otherwise noted)[1] VD1 + VD2 = 28 Vdc, VD3A = VD3B = 45 Vdc, IDQ1 = 25 mA,

IDQ2 = 65 mA, IDQ3A = 75 mA, VG3B = (VBIAS – 2.05)[2] Vdc, Pout = 16 W Avg., 1-tone CW, f = 1805 MHz.

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

G

45.0

48.1

—

dB

Power added efficiency

PAE

34.0

40.9

—

%

Saturated power[3]

(Pulsed CW, 5% duty cycle)

Psat

49.0

51.0

—

dBm

[1] Part input and output matched to 50 ohms.

[2] Increase VG3B (peaking side) until IDQ3B = 50 mA current is attained, and then subtract 2.05 V for final VG3B bias voltage.

[3] Psat is defined at P3dB compression point.

Table 13. Functional tests — 2200 MHz

(In NXP production test fixture, TA = 25°C unless otherwise noted)[1] VD1 + VD2 = 28 Vdc, VD3A = VD3B = 45 Vdc, IDQ1 = 25 mA,

IDQ2 = 65 mA, IDQ3A = 75 mA, VG3B = (VBIAS – 2.05)[2] Vdc, Pout = 16 W Avg., 1-tone CW, f = 2200 MHz.

Characteristic

Symbol

Min

Typ

Max

Unit

Gain

G

44.5

48.1

—

dB

Power added efficiency

PAE

34.0

41.6

—

%

Saturated power[3]

(Pulsed CW, 5% duty cycle)

Psat

48.0

50.0

—

dBm

[1] Part input and output matched to 50 ohms.

[2] Increase VG3B (peaking side) until IDQ3B = 50 mA current is attained, and then subtract 2.05 V for final VG3B bias voltage.

[3] Psat is defined at P3dB compression point.

13.4 Wideband ruggedness

Table 14. Wideband ruggedness

(In NXP reference circuit, TA = 25°C unless otherwise noted)[1] IDQ1 = 25 mA, IDQ2 = 65 mA, IDQ3A = 75 mA,

VG3B = (VBIAS – 2.05)[2] Vdc, f = 2000 MHz, Additive White Gaussian Noise (AWGN) with 10 dB PAR.

Characteristic

Test results

ISBW of 400 MHz at VDD3A = VDD3B = 55 Vdc, 3 dB input

overdrive from 16 W Avg. modulated output power

No device degradation

[1] All data measured with device soldered to NXP reference circuit.

[2] Increase VG3B (peaking side) until IDQ3B = 50 mA current is attained, and then subtract 2.05 V for final VG3B bias voltage.