| Datenblatt-Suchmaschine für elektronische Bauteile |
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IRF7204 Datenblatt(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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IRF7204 Datenblatt(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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1 / 7 page ![]() -30V P - Channel Enhancement Mode MOSFET Features: RDS(ON)<55m @VGS=10V RDS(ON)<90m @VGS=4.5V Super high density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current Applications: Switching power supply, SMPS Battery Powered System DC/DC Converter DC/AC Converter Load Switch Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current-Continuous ID -5.1 A Drain Current-Pulsed (Note 1) IDM -20 A Maximum Power Dissipation PD 2.5 W Operating Junction and Storage Temperature Range TJ,TSTG -55 To 150 ℃ Thermal Characteristic Thermal Resistance,Junction-to-Ambient (Note 2) RθJA 50 ℃ /W General Description: The IRF7204 is the single P-Channel logic enhancement mode power field effect transistors to provide excellent RDS(on), low gate charge and low gate resistance. It’s up to -30V operation voltage is well suited in switching mode power supply, SMPS, notebook computer power management and other battery powered circuits. IRF7204 1 Top View 8 1 2 3 4 5 6 7 D D D G S A D S S |
Ähnliche Teilenummer - IRF7204 |
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Ähnliche Beschreibung - IRF7204 |
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