TM1102 datasheet(4/7 Pages) PHILIPS

4 / 7 page

1996 May 09

Philips Semiconductors

Product speciﬁcation

PNP transistor/Schottky-diode module

PZTM1102

Notes

1. Measured under pulsed conditions: tp ≤ 300 µs; δ ≤ 0.01.

2. Limiting value for Tj = 125 °C; Tj = 150 °C with reverse current applied is not allowed as this may cause thermal

runaway leading to thermal destruction of the diode. A peak junction temperature of Tj = 150 °C is only allowed with

forward voltage applied.

THERMAL CHARACTERISTICS

Note

1. Refer to SOT223 standard mounting conditions.

Schottky barrier diode

forward voltage

IF = 100 mA; note 1

−

330

IF = 100 mA; Tamb = −55 to +150 °C; note 1

−

400

IF = 1 A; note 1

−

500

IF = 1 A; Tamb = −55 to +150 °C; note 1

−

560

reverse current

VR = 40 V; note 1

−

300

µA

VR = 40 V; Tj = 125 °C;

Tamb = −55 to +150 °C; note 1

−

35(2)

reverse current

VR = 10 V; note 1

−

µA

VR = 10 V; Tj = 125 °C;

Tamb = −55 to +150 °C; note 1

−

15(2)

junction capacitance

VR = 0 V; f = 1 MHz

−

250

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

Rth j-a

thermal resistance from junction to ambient (for the transistor)

note 1

100

K/W

Rth j-a

thermal resistance from junction to ambient (for the Schottky diode) note 1

250

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

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