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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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IRFS3607 Datenblatt(PDF) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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IRFS3607 Datenblatt(HTML) 1 Page - EVER SEMICONDUCTOR CO.,LIMITED |
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1 / 4 page  IRFS3607 Single N-Channel MOSFET Symbol Parameter Rating Units VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1,6 120 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1,6 85 A IDM Pulsed Drain Current2 250 A EAS Single Pulse Avalanche Energy3 57.8 mJ IAS Avalanche Current 34 A PD@TC=25℃ Total Power Dissipation4 150 W TSTG Storage Temperature Range -55 to 175 ℃ TJ Operating Junction Temperature Range -55 to 175 ℃ Symbol Parameter Typ. Max. Unit Thermal Resistance Junction-Ambient RθJA 1 --- ℃ 60 /W Thermal Resistance Junction-Case RθJC 1 --- ℃ 1 /W BVDSS RDSON ID 80V 6.5m Ω 120A Advanced Trench MOS Technology 100% EAS Guaranteed Green Device Available Super Low Gate Charge Applications Absolute Maximum Ratings Thermal Data TO263 Pin Configuration Product Summary Features Power Tools. UPS Synchronous Rectification in SMPS. Rev:2023A2 1 |
Ähnliche Teilenummer - IRFS3607 |
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Ähnliche Beschreibung - IRFS3607 |
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