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BTS112 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer BTS112
Bauteilbeschribung  isc N-Channel MOSFET Transistor
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

BTS112 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc N-Channel MOSFET Transistor
BTS112
www.iscsemi.com
1
FEATURES
· Drain Current -ID= 12A@ TC=25℃
· Drain Source Voltage -VDSS= 60V(Min)
· Static Drain-Source On-Resistance
-RDS(on) = 0.15Ω(Max)@VGS= 10V
DESCRIPTION
· Motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
30
V
VGS
Gate-Source Voltage-Continuous
±
20
V
ID
Drain Current(DC)
12
A
IDM
Drain Current(Pulse )
48
A
PD
Total Dissipation
40
W
TJ
Max. Operating Junction Temperature
-55~150
℃
Tstg
Storage Temperature
-55~150
℃
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
3.1
℃
/W
3
2
1
TO-220C Package


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