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BTS136 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BTS136 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() isc N-Channel MOSFET Transistor BTS136 www.iscsemi.com 1 FEATURES · Drain Current -ID= 27A@ TC=25℃ · Drain Source Voltage -VDSS= 50V(Min) · Static Drain-Source On-Resistance -RDS(on) = 0.05Ω(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch ABSOLUTE MAXIMUM RATINGS(Ta=25℃) THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 50 V VGS Gate-Source Voltage-Continuous ± 20 V ID Drain Current(DC) 27 A IDM Drain Current(Pulse ) 108 A PD Total Dissipation 75 W TJ Max. Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.67 ℃ /W 2 2 3 1 |
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