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UGF10GCT Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited

Teilenummer UGF10GCT
Bauteilbeschribung  Ultrafast Rectifier Diode
PDF  2 Pages
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Hersteller  ISC [Inchange Semiconductor Company Limited]
Direct Link  http://www.iscsemi.cn
Logo ISC - Inchange Semiconductor Company Limited

UGF10GCT Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited

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Ultrafast Rectifier Diode
UGF10GCT
www.iscsemi.com
1
FEATURES
· Soft recovery characteristics
· Excellent high temperature switching
APPLICATIONS
· Switching power supply
· PWM pulse width modulator
· Inverter
· Other electronic circuits
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
400
V
IF(AV)
Average Rectified Forward Current
10
A
IFSM
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load per leg
60
A
TJ
Junction Temperature
-40~150
℃
Tstg
Storage Temperature Range
-40~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case per leg
6.0
℃
/W
ELECTRICAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
TYP
MAX
UNIT
VF
Maximum Instantaneous Forward Voltage IF= 5.0A ; TJ= 25℃
-
1.3
V
IR
Maximum Instantaneous Reverse Current Rated DC Voltage, TJ= 25℃
-
10
uA
trr
Reverse recovery time
IF= 0.5A, IR=1.0A, Irr=0.25A
-
35
ns


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