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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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SST39LF080 Datenblatt(PDF) 10 Page - Silicon Storage Technology, Inc |
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SST39LF080 Datenblatt(HTML) 10 Page - Silicon Storage Technology, Inc |
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10 / 25 page  10 EOL Data Sheet 8 Mbit Multi-Purpose Flash SST39LF080 / SST39VF080 ©2007 Silicon Storage Technology, Inc. S71146-07-EOL 6/07 TABLE 8: DC OPERATING CHARACTERISTICS VDD = 3.0-3.6V FOR SST39LF080 AND 2.7-3.6V FOR SST39VF0801 Symbol Parameter Limits Test Conditions Min Max Units IDD Power Supply Current Address input=VILT/VIHT, at f=1/TRC Min VDD=VDD Max Read2 20 mA CE#=VIL, OE#=WE#=VIH, all I/Os open Program and Erase 30 mA CE#=WE#=VIL, OE#=VIH ISB Standby VDD Current 20 µA CE#=VIHC, VDD=VDD Max IALP Auto Low Power 20 µA CE#=VILC, VDD=VDD Max All inputs=VSS or VDD, WE#=VIHC ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max ILO Output Leakage Current 10 µA VOUT=GND to VDD, VDD=VDD Max VIL Input Low Voltage 0.8 V VDD=VDD Min VILC Input Low Voltage (CMOS) 0.3 V VDD=VDD Max VIH Input High Voltage 0.7VDD VVDD=VDD Max VIHC Input High Voltage (CMOS) VDD-0.3 V VDD=VDD Max VOL Output Low Voltage 0.2 V IOL=100 µA, VDD=VDD Min VOH Output High Voltage VDD-0.2 V IOH=-100 µA, VDD=VDD Min T8.7 1146 1. Typical conditions for the Active Current shown on the front data sheet page are average values at 25°C (room temperature), and VDD = 3V for VF devices. Not 100% tested. 2. Values are for 70 ns conditions. See the Multi-Purpose Flash Power Rating application note for further information. TABLE 9: RECOMMENDED SYSTEM POWER-UP TIMINGS Symbol Parameter Minimum Units TPU-READ1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. Power-up to Read Operation 100 µs TPU-WRITE1 Power-up to Program/Erase Operation 100 µs T9.1 1146 TABLE 10: CAPACITANCE (Ta = 25°C, f=1 Mhz, other pins open) Parameter Description Test Condition Maximum CI/O1 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. I/O Pin Capacitance VI/O = 0V 12 pF CIN1 Input Capacitance VIN = 0V 6 pF T10.0 1146 TABLE 11: RELIABILITY CHARACTERISTICS Symbol Parameter Minimum Specification Units Test Method NEND1,2 1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter. 2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a higher minimum specification. Endurance 10,000 Cycles JEDEC Standard A117 TDR1 Data Retention 100 Years JEDEC Standard A103 ILTH1 Latch Up 100 + IDD mA JEDEC Standard 78 T11.2 1146 |
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