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APTGF200U120DG Datenblatt(PDF) 6 Page - Microsemi Corporation

Teilenummer APTGF200U120DG
Bauteilbeschribung  Single Switch with Series diodes NPT IGBT Power Module
PDF  6 Pages
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Hersteller  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTGF200U120DG Datenblatt(HTML) 6 Page - Microsemi Corporation

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APTGF200U120DG
www.microsemi.com
6 – 6
0
50
100
150
200
250
300
350
400
450
0
400
800
1200
Reverse Bias Safe Operating Area
VCE, Collector to Emitter Voltage (V)
0.9
0.7
0.5
0.3
0.1
0.05
Single Pulse
0
0.02
0.04
0.06
0.08
0.1
0.12
0.00001
0.0001
0.001
0.01
0.1
1
10
Rectangular Pulse Duration (Seconds)
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
Hard
switching
ZCS
ZVS
0
20
40
60
80
100
120
20
60
100
140
180
220
IC, Collector Current (A)
Operating Frequency vs Collector Current
VCE = 600V
D = 50%
RG = 1.2Ω
TJ = 125°C
TC= 75°C
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.



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