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16TTS12S Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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16TTS12S Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() isc Thyristors 16TTS12S www.iscsemi.com 1 FEATURES · Glass passivated junctions · VDRM/VRRM :1200V APPLICATIONS · Typical applications are in input rectification (soft start) andthese products are designed to be used with Vishay HPPinput diodes, switches and output rectifiers which areavailable in identical package outlines ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT VDRM Repetitive Peak Off-state Voltage 1200 V VRRM Repetitive Peak Reverse Voltage 1200 V IT(AV) On-state Current Tc=95℃ 10 A ITSM Surge Non-repetitive On-state Current , Tc=110℃ 200 A PG(AV) Average Gate Power 2.0 W di/dt Repetitive Rate of Rise of On-state Current after Triggering 150 A/us I2t I2t for fusing 10 ms sine pulse, rated VRRM applied 144 A2S 10 ms sine pulse, no voltage reapplied 200 IGM Peak Gate Current,TJ= 125℃ 1.5 A Tj Operating Junction Temperature -40 ~+125 ℃ Tstg Storage Temperature -40 ~+125 ℃ |
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