| Datenblatt-Suchmaschine für elektronische Bauteile |
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2SC6082B Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SC6082B Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 3 page ![]() Silicon NPN Power Transistor 2SC6082B www.iscsemi.com 1 FEATURES · Large current capacitance · High speed switching · Low saturation voltage DESCRIPTION · Switching Regulator · Driver Circuit ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 15 A IB Base Current- Continuous 3 A ICP Collector Current-Pulse 20 A PC Collector Power Dissipation @ TC=25℃ 2 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2 2 3 1 |
Ähnliche Teilenummer - 2SC6082B |
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Ähnliche Beschreibung - 2SC6082B |
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