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APTM20DHM20TG Datenblatt(PDF) 1 Page - Microsemi Corporation

Teilenummer APTM20DHM20TG
Bauteilbeschribung  Asymmetrical - Bridge MOSFET Power Module
PDF  6 Pages
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Hersteller  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM20DHM20TG Datenblatt(HTML) 1 Page - Microsemi Corporation

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APTM20DHM20TG
www.microsemi.com
1 – 6
NTC2
S4
G4
VBUS SENSE
VBUS
Q1
G1
S1
OUT1
OUT2
Q4
CR3
0/VBUS
CR2
0/VBUSSENSE
NTC1
NTC2
OUT2
OUT1
VBUS
VBUS
SENSE
S4
G4
S1
NTC1
0/VBUS
0/VBUS
SENSE
G1
Absolute maximum ratings
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Symbol
Parameter
Max ratings
Unit
VDSS
Drain - Source Breakdown Voltage
200
V
Tc = 25°C
89
ID
Continuous Drain Current
Tc = 80°C
66
IDM
Pulsed Drain current
356
A
VGS
Gate - Source Voltage
±30
V
RDSon
Drain - Source ON Resistance
24
m
Ω
PD
Maximum Power Dissipation
Tc = 25°C
357
W
IAR
Avalanche current (repetitive and non repetitive)
89
A
EAR
Repetitive Avalanche Energy
50
EAS
Single Pulse Avalanche Energy
2500
mJ
VDSS = 200V
RDSon = 20mΩ typ @ Tj = 25°C
ID = 89A @ Tc = 25°C
Application
•
Welding converters
•
Switched Mode Power Supplies
•
Switched Reluctance Motor Drives
Features
•
Power MOS 7® MOSFETs
-
Low RDSon
-
Low input and Miller capacitance
-
Low gate charge
-
Avalanche energy rated
-
Very rugged
•
Kelvin source for easy drive
•
Very low stray inductance
-
Symmetrical design
-
Lead frames for power connections
•
Internal thermistor for temperature monitoring
•
High level of integration
Benefits
•
Outstanding performance at high frequency operation
•
Direct mounting to heatsink (isolated package)
•
Low junction to case thermal resistance
•
Solderable terminals both for power and signal for
easy PCB mounting
•
Low profile
•
RoHS Compliant
Asymmetrical - Bridge
MOSFET Power Module


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