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UTT20N04L-S08-R Datenblatt(PDF) 1 Page - Unisonic Technologies |
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UTT20N04L-S08-R Datenblatt(HTML) 1 Page - Unisonic Technologies |
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1 / 7 page ![]() UNISONIC TECHNOLOGIES CO., LTD UTT20N04 Power MOSFET www.unisonic.com.tw 1 of 6 Copyright © 2018 Unisonic Technologies Co., Ltd QW-R209-300.A 20A, 40V N-CHANNEL ENHANCEMENT MODE DESCRIPTION The UTT20N04 uses UTC’s advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON) ≤ 33 mΩ @ VGS=10V, ID=10A RDS(ON) ≤ 60 mΩ @ VGS=4.5V, ID=10A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified SYMBOL SOP-8 ORDERING INFORMATION Ordering Number Pin Assignment Lead Free Halogen Free Package 1 234 56 7 8 Packing UTT20N04L-S08-R UTT20N04G-S08-R SOP-8 S S S G D D D D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source MARKING |
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Ähnliche Beschreibung - UTT20N04L-S08-R |
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