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APTM120A20DG Datenblatt(PDF) 6 Page - Microsemi Corporation

Teilenummer APTM120A20DG
Bauteilbeschribung  Phase leg with Series diodes MOSFET Power Module
PDF  6 Pages
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Hersteller  MICROSEMI [Microsemi Corporation]
Direct Link  http://www.microsemi.com
Logo MICROSEMI - Microsemi Corporation

APTM120A20DG Datenblatt(HTML) 6 Page - Microsemi Corporation

  APTM120A20DG Datasheet HTML 1Page - Microsemi Corporation APTM120A20DG Datasheet HTML 2Page - Microsemi Corporation APTM120A20DG Datasheet HTML 3Page - Microsemi Corporation APTM120A20DG Datasheet HTML 4Page - Microsemi Corporation APTM120A20DG Datasheet HTML 5Page - Microsemi Corporation APTM120A20DG Datasheet HTML 6Page - Microsemi Corporation  
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APTM120A20DG
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Delay Times vs Current
td(on)
td(off)
0
20
40
60
80
10
30
50
70
90
110
ID, Drain Current (A)
VDS=800V
RG=0.8Ω
TJ=125°C
L=100µH
Rise and Fall times vs Current
tr
tf
0
25
50
10
30
50
70
90
110
ID, Drain Current (A)
VDS=800V
RG=0.8Ω
TJ=125°C
L=100µH
Switching Energy vs Current
Eon
Eoff
0
3
6
9
12
10
30
50
70
90
110
ID, Drain Current (A)
VDS=800V
RG=0.8Ω
TJ=125°C
L=100µH
Eon
Eoff
0
3
6
9
0123456
Gate Resistance (Ohms)
Switching Energy vs Gate Resistance
VDS=800V
ID=50A
TJ=125°C
L=100µH
Hard
switching
ZCS
0
25
50
75
100
125
150
175
200
10
20
30
40
50
ID, Drain Current (A)
Operating Frequency vs Drain Current
VDS=800V
D=50%
RG=0.8Ω
TJ=125°C
TC=75°C
TJ=25°C
TJ=150°C
1
10
100
1000
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
VSD, Source to Drain Voltage (V)
Source to Drain Diode Forward Voltage
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.



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