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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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TDA8003TS/C2 Datenblatt(PDF) 15 Page - NXP Semiconductors |
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TDA8003TS/C2 Datenblatt(HTML) 15 Page - NXP Semiconductors |
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15 / 24 page  2000 Apr 20 15 Philips Semiconductors Product specification I2C-bus SIM card interface TDA8003TS Pin SDA (open-drain) VIL LOW-level input voltage −0.3 − +0.3VDDI V VIH HIGH-level input voltage 0.7VDDI − 6V ILH HIGH-level leakage current −− 1 µA IIL LOW-level input current depends on the pull-up resistor −− −µA VOL LOW-level output voltage IOL =3mA −− 0.3 V Pin SCL (open-drain) VIL LOW-level input voltage −0.3 − +0.3VDDI V VIH HIGH-level input voltage 0.7VDDI − 6V ILI input leakage current −− 1 µA Pin SIMERR (100 k Ω pull-up resistor to VDDI) VOL LOW-level output voltage IOL <1mA −− 0.3VDDI V VOH HIGH-level output voltage IOH < −1 µA 0.7VDDI −− V Pins SAD0, SAD1 and PWROFF VIL LOW-level input voltage 0 − 0.3VDDI V VIH HIGH-level input voltage 0.7VDDI − VDDI + 0.3 V ILI input leakage current −− ±1 µA Pin RST VO output voltage inactive mode; IO =1mA −0.3 − +0.4 V IO output current inactive mode; pin RST short circuit to ground −− −1mA VOL LOW-level output voltage IOL = 200 µA −0.2 − +0.3 V VOH HIGH-level output voltage IOH < −200 µAVCC − 0.5 − VCC + 0.2 V tf fall time CL =30pF −− 0.5 µs tr rise time CL =30pF −− 0.5 µs Pin CLK VO output voltage inactive mode; IO =1mA −0.3 − +0.4 V IO output current inactive mode; pin CLK short circuit to ground −− −1mA VOL LOW-level output voltage IOL = 200 µA −0.2 − +0.3 V VOH HIGH-level output voltage IOH = −200 µAVCC − 0.5 − VCC + 0.2 V tf fall time CL =30pF −− 8ns tr rise time CL =30pF −− 8ns fclk clock frequency 1 MHz power-down configuration 1 − 1.5 MHz regular activity 0 − 10 MHz δ duty factor CL =30pF 45 − 55 % SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT |
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