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Datenblatt-Suchmaschine für elektronische Bauteile |
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Datenblatt-Suchmaschine für elektronische Bauteile |
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STM32F101XB Datenblatt(PDF) 38 Page - STMicroelectronics |
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STM32F101XB Datenblatt(HTML) 38 Page - STMicroelectronics |
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38 / 64 page  Electrical characteristics STM32F101xx 38/64 5.3.9 Memory characteristics Flash memory The characteristics are given at TA = −40 to 85 °C unless otherwise specified. Table 24. Flash endurance and data retention Table 23. Flash memory characteristics(1) 1. TBD stands for to be determined. Symbol Parameter Conditions Min Typ Max(2) 2. Values based on characterization and not tested in production. Unit tprog Word programming time TA = −40 to +85 °C 20 40 µs tERASE Page (1kB) erase time TA = −40 to +85 °C 20 40 ms tME Mass erase time TA = −40 to +85 °C 20 40 ms IDD Supply current Read mode fHCLK = 36MHz with 2 wait states, VDD = 3.3 V 20 mA Write / Erase modes fHCLK = 36 MHz, VDD = 3.3 V 5mA Power-down mode / HALT, VDD=3.0 to 3.6 V 50 µA Symbol Parameter Conditions Value Unit Min(1) 1. Values based on characterization not tested in production. Typ Max NEND Endurance 1 10 kcycles tRET Data retention TA = 85° C 30 Years |
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