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SCT040TO65G3 Datenblatt(PDF) 4 Page - STMicroelectronics

Teilenummer SCT040TO65G3
Bauteilbeschribung  Silicon carbide Power MOSFET 650 V, 40 mΩ typ., 35 A in a TO-LL package
PDF  15 Pages
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Hersteller  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

SCT040TO65G3 Datenblatt(HTML) 4 Page - STMicroelectronics

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Table 7. Reverse SiC diode characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ISD(1)
Continuous diode forward current
TC = 25 °C
-
35
A
TC = 100 °C
-
35
VSD
Diode forward voltage
ISD = 20 A, VGS = 0 V
-
2.8
V
trr
Reverse recovery time
ISD = 20 A, 1 kA/μs, VDD = 400 V
-
14
ns
Qrr
Reverse recovery charge
-
82
nC
IRRM
Reverse recovery current
-
9.4
A
1. ISD is limited by package.
SCT040TO65G3
Electrical characteristics
DS14654 - Rev 1
page 4/15



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