| Datenblatt-Suchmaschine für elektronische Bauteile |
|
TC646BEPATR Datenblatt(PDF) 26 Page - Microchip Technology |
|
|
|||||||||||||||||||||||||||||
TC646BEPATR Datenblatt(HTML) 26 Page - Microchip Technology |
|
26 / 36 page ![]() TC646B/TC648B/TC649B DS21755B-page 26 2003 Microchip Technology Inc. FIGURE 5-13: Design Example Schematic. Bypass capacitor CVDD is added to the design to decouple the bias voltage. This is good to have, espe- cially when using a MOSFET as the drive device. This helps to give a localized low-impedance source for the current required to charge the gate capacitance of Q1. Two other bypass capacitors (labeled as CB) were also added to decouple the VIN and VAS nodes. These were added simply to remove any noise present that might cause false triggerings or PWM jitter. R5 is the pull-up resistor for the FAULT output. The value for this resistor is system-dependent. FAULT SENSE R1 R2 R3 32.4 k Ω R4 GND Q1 +12V +5V VDD VIN VAS VOUT RSENSE CSENSE CF 1.0 µF CF TC649B Fan CB 0.01 µF CB 0.01 µF + 4 5 7 6 8 1 3 2 +5V 17.8 k Ω 237 k Ω 45.3k Ω R5 10 k Ω 0.1 µF SI2302 or MGSF1N02E Panasonic® 12V, 140 mA FBA06T12H Thermometrics® 100 k Ω @25°C NHQ104B425R5 1.0 µF 3.0 Ω CVDD |
|
Link URL |
| War ALLDATASHEET hilfreich? [ DONATE ] |
Über Alldatasheet | Werbung | Kontakt | Privatsphäre und Datenschutz | Link zum Datenblatt | Linktausch | Hersteller All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |