TC1186 datasheet(2/18 Pages) MICROCHIP

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TC1054/TC1055/TC1186

DS21350D-page 2

1.0

ELECTRICAL

CHARACTERISTICS

Absolute Maximum Ratings †

Input Voltage ....................................................................6.5V

Output Voltage .....................................(-0.3V) to (VIN + 0.3V)

Power Dissipation ......................... Internally Limited (Note 6)

Maximum Voltage on Any Pin ...................VIN +0.3V to -0.3V

Operating Junction Temperature Range .. -40°C < TJ < 125°C

Storage Temperature.....................................-65°C to +150°C

† Stresses above those listed under "Absolute Maximum

Ratings" may cause permanent damage to the device. These

are stress ratings only and functional operation of the device

at these or any other conditions above those indicated in the

operation sections of the specifications is not implied.

Exposure to Absolute Maximum Rating conditions for

extended periods may affect device reliability.

DC CHARACTERISTICS

Electrical Specifications: Unless otherwise noted, VIN = VOUT + 1V, IL = 100 µA, CL = 3.3 µF, SHDN > VIH, TA = +25°C.

Boldface type specifications apply for junction temperatures of -40°C to +125°C.

Parameters

Sym

Min

Typ

Max

Units

Conditions

Input Operating Voltage

VIN

2.7

—

6.0

Note 8

Maximum Output Current

IOUTMAX

100

150

—

TC1054

TC1055

TC1186

Output Voltage

VOUT

VR – 2.5% VR ±0.5% VR + 2.5%

Note 1

VOUT Temperature Coefficient

TCVOUT

—

ppm/°C Note 2

Line Regulation

ΔVOUT/ΔVIN

—0.05

0.35

%(VR + 1V) ≤ VIN ≤ 6V

Load Regulation:

TC1054; TC1055

TC1186

ΔVOUT/VOUT

—

0.5

(Note 3)

IL = 0.1 mA to IOUTMAX

Dropout Voltage:

TC1055; TC1186

TC1186

VIN-VOUT

—

180

270

—

120

250

400

IL = 100 µA

IL = 20 mA

IL = 50 mA

IL = 100 mA

IL = 150 mA (Note 4)

Supply Current

IIN

—50

µA

SHDN = VIH, IL = 0 µA (Note 9)

Shutdown Supply Current

IINSD

—

0.05

0.5

µA

SHDN = 0V

Power Supply Rejection Ratio

PSRR

—

≤ 1kHz

Output Short Circuit Current

IOUTSC

—

300

450

VOUT = 0V

Thermal Regulation

ΔVOUT/ΔPD

—0.04

—

V/W

Notes 5, 6

Thermal Shutdown Die

Temperature

TSD

—

160

—

°C

Thermal Shutdown Hysteresis

ΔTSD

—10—

°C

Note 1: VR is the regulator output voltage setting. For example: VR = 1.8V, 2.5V, 2.7V, 2.85V, 3.0V, 3.3V, 3.6V, 4.0V, 5.0V.

3: Regulation is measured at a constant junction temperature using low duty cycle pulse testing. Load regulation is tested

over a load range from 0.1 mA to the maximum specified output current. Changes in output voltage due to heating

effects are covered by the thermal regulation specification.

4: Dropout voltage is defined as the input to output differential at which the output voltage drops 2% below its nominal

value.

5: Thermal Regulation is defined as the change in output voltage at a time T after a change in power dissipation is applied,

excluding load or line regulation effects. Specifications are for a current pulse equal to ILMAX at VIN = 6V for T = 10 ms.

6: The maximum allowable power dissipation is a function of ambient temperature, the maximum allowable junction

temperature and the thermal resistance from junction-to-air (i.e., TA, TJ, θJA). Exceeding the maximum allowable power

dissipation causes the device to initiate thermal shutdown. Please see Section 5.0 “Thermal Considerations”, “Ther-

mal Considerations”, for more details.

7: Hysteresis voltage is referenced by VR.

8: The minimum VIN has to justify the conditions: VIN ≥ VR + VDROPOUT and VIN ≥ 2.7V for IL = 0.1 mA to IOUTMAX.

9: Apply for junction temperatures of -40C to +85C.

TC VOUT = (VOUTMAX – VOUTMIN)x 106

VOUT x ΔT

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