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ADA4530-1ARZ-R7 Datenblatt(PDF) 31 Page - Analog Devices |
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ADA4530-1ARZ-R7 Datenblatt(HTML) 31 Page - Analog Devices |
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31 / 52 page ![]() Data Sheet ADA4530-1 APPLICATIONS INFORMATION analog.com Rev. C | 31 of 52 Figure 102. Phase Margin vs. Load Capacitance with Various Output Isolating Resistors Figure 103. Frequency Response with CL = 1 nF and Various Isolating Resistors EMI REJECTION RATIO Circuit performance is often adversely affected by high frequency electromagnetic interference (EMI). When the signal strength is low and transmission lines are long, an op amp must accurately amplify the input signals. However, all op amp pins—the noninverting input, inverting input, positive supply, negative supply, and output pins— are susceptible to EMI signals. These high frequency signals are coupled into an op amp by various means, such as conduction, near field radiation, or far field radiation. For example, wires and PCB traces can act as antennas and pick up high frequency EMI signals. Amplifiers do not amplify EMI or RF signals due to their relatively low bandwidth. However, due to the nonlinearities of the input devices, op amps can rectify these out of band signals. When these high frequency signals are rectified, they appear as a dc offset at the output. To describe the ability of the ADA4530-1 to perform as intended in the presence of electromagnetic energy, the electromagnetic inter- ference rejection ratio (EMIRR) of the noninverting pin is specified in Table 1, Table 2, and Table 3 of the Specifications section. A mathematical method of measuring EMIRR is defined as follows: EMIRR = 20log(VIN_PEAK/ΔVOS) (1) where VIN_PEAK is the peak amplitude of the input voltage. Figure 104 shows the typical EMIRR vs. frequency performance for each of the specified supply voltages. Figure 104. EMIRR vs. Frequency |
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