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2SA778KTZ Datenblatt(PDF) 3 Page - Renesas Technology Corp

Teilenummer 2SA778KTZ
Bauteilbeschribung  Silicon PNP Epitaxial
PDF  7 Pages
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Hersteller  RENESAS [Renesas Technology Corp]
Direct Link  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

2SA778KTZ Datenblatt(HTML) 3 Page - Renesas Technology Corp

  2SA778KTZ Datasheet HTML 1Page - Renesas Technology Corp 2SA778KTZ Datasheet HTML 2Page - Renesas Technology Corp 2SA778KTZ Datasheet HTML 3Page - Renesas Technology Corp 2SA778KTZ Datasheet HTML 4Page - Renesas Technology Corp 2SA778KTZ Datasheet HTML 5Page - Renesas Technology Corp 2SA778KTZ Datasheet HTML 6Page - Renesas Technology Corp 2SA778KTZ Datasheet HTML 7Page - Renesas Technology Corp  
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2SA778(K), 2SA778A(K)
REJ03G0628-0300 Rev.3.00 Jul 30, 2007
Page 3 of 7
Main Characteristics
0
50
100
150
Ambient Temperature Ta (
°C)
Maximum Collector Dissipation Curve
300
200
100
Typical Output Characteristics (1)
Collector to Emitter Voltage VCE (V)
0–1
–2
–3
–4
–5
–50
–40
–30
–20
–10
IB = 0
–0.05 mA
–0.1
–0.2
–0.3
–0.4
–0.5
–0.6
–1.0
–0.15
P
C =
200
mW
–0.9
–0.8
–0.7
Collector to Emitter Voltage VCE (V)
0
–40
–80
–120
–160
–200
Typical Output Characteristics (2)
–0.5
–0.4
–0.3
–0.2
–0.1
IB = 0
–1 µ
A
–2
–3
–4
Collector Cutoff Current vs.
Collector to Base Voltage
Collector to Base Voltage VCB (V)
–300
–100
–30
–10
–3
–1.0
–0.3
–200
–160
–120
–80
–40
0
Ta =
25°
C
50
75
100
125
DC Current Transfer Ratio vs.
Collector Current
Collector Current IC (mA)
–1
–2
–5
–10
–20
–50
40
60
80
100
120
140
VCE = –3 V
Ta =
–25
°C
0
25
50
75
Collector to Emitter Saturation Voltage vs.
Collector Current
Collector Current IC (mA)
–0.1 –0.2
–0.5 –1.0 –2
–5 –10 –20
–50
0
–0.4
–0.8
–1.2
–1.6
–2.0
IC = 10 IB



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