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TDF8541JS/N2 Datenblatt(PDF) 32 Page - NXP Semiconductors

Teilenummer TDF8541JS/N2
Bauteilbeschribung  I 2C-bus controlled 4 x 45 W power amplifier
PDF  54 Pages
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Hersteller  NXP [NXP Semiconductors]
Direct Link  http://www.nxp.com
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TDF8541JS/N2 Datenblatt(HTML) 32 Page - NXP Semiconductors

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TDF8541
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 3 — 13 December 2011
32 of 54
NXP Semiconductors
TDF8541
I2C-bus controlled 4
 45 W power amplifier
[1]
10 k
 series resistance if connected to V
P.
[2]
Human Body Model (HBM): all pins have passed all tests to 2500 V to guarantee 2000 V, according to
class II.
[3]
Charged-Device Model (CDM).
10. Thermal characteristics
11. Characteristics
Vx
voltage on pin x
SCL and SDA
0
6.5
V
SVR, ACGND and
DIAG
010
V
STB
[1] 024
V
Ptot
total power dissipation
Tcase =70 C-
80
W
VESD
electrostatic discharge
voltage
HBM; C = 100 pF;
Rs =1.5 k
[2] -
2000
V
CDM
[3]
corner pins
-
750
V
non-corner pins; except
pin 24 (SVR) version
TH only
-500
V
pin 24 (SVR) version
TH only
-400
V
Table 18.
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Table 19.
Thermal characteristics
Symbol
Parameter
Conditions
Typ
Unit
DBS27/RDBS27/DBSMS27P
Rth(j-c)
thermal resistance from junction to case
1.15
K/W
Rth(j-a)
thermal resistance from junction to ambient
40
K/W
HSOP36
Rth(j-c)
thermal resistance from junction to case
1.15
K/W
Rth(j-a)
thermal resistance from junction to ambient
35
K/W
Table 20.
Characteristics
Refer to test circuit (see Figure 29) at Tamb =25 C; VP = 14.4 V; unless otherwise specified. Tested at Tamb =25 C;
guaranteed for Tj = 40 C to +150 C; functionality is guaranteed for VP < 10 V unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Supply voltage behavior
VP(oper)
operating supply voltage
RL = 4 
614.4
18
V
RL = 2 
614.4
16
V
Iq
quiescent current
no load
-
260
350
mA
no load; VP = 7 V
-
190
-
mA



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