20/06/2006 V2.0

3

AlInGaP : SPNovaLED-1 Watt (400mA)

Semiconductors

Innovating Illumination

Unit

Absolute Maximum Ratings

Maximum Value

DC forward current

Peak pulse current (tp ≤ 10µs, Duty cycle = 0.1)

Reverse Voltage

ESD Thereshold (HBM)

LED juction temperature

Operating temperature

Storage temperature

Power dissipation

400

500

12

2000

125

-40 … +100

-40 … +100

1200

mA

mA

V

V

˚C

˚C

˚C

mW

Forward Voltage (V)

Vf Binning (Optional)

Vf Bin @ 400 mA

02

03

2.2 ... 2.5

2.5 ... 2.8

Forward voltage, Vf is measured with an accuracy of

±0.1 V.

Please consult sales and marketing for special part number to incorporate Vf binning.

Electrical Characteristics at Ta=25˚C

Material

Material

Lead-frame

Package

Encapsulate

Soldering Leads

Cu Alloy With Ag Plating

High Temperature Resistant Plastic, PPA

Silicone Resin

Sn-Sn Plating