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SS13 Datenblatt(PDF) 2 Page - ON Semiconductor

Teilenummer SS13
Bauteilbeschribung  Schottky Rectifier
PDF  5 Pages
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Hersteller  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
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SS13 Datenblatt(HTML) 2 Page - ON Semiconductor

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SS12 − S100
www.onsemi.com
2
Specifications
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Value
Unit
SS12
SS13
SS14
SS15
SS16
SS18
SS19
S100
VRRM
Peak Repetitive Reverse Voltage
20
30
40
50
60
80
90
100
V
IF(AV)
Maximum Average Forward Current:
0.375−inch Lead Length at TA = 75°C
1.0
A
IFSM
Non−Repetitive Peak Forward Surge
Current: 8.3 ms Single Half−Sine Wave
40
A
TJ
Operating Junction Temperature
−65 to +125
°C
TSTG
Storage Temperature Range
−65 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
Value
Unit
PD
Power Dissipation
1.1
W
RqJA
Thermal Resistance, Junction−to−Ambient (Note 1)
88
°C/W
1. Device mounted on FE−4 PCB 0.013 mm.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Conditions
Value
Unit
SS12
SS13
SS14
SS15
SS16
SS18
SS19
S100
VF
Maximum Forward
Voltage
IF = 1.0 A
500
700
850
mV
IR
Maximum Reverse
Current at Rated VR
TA = 25°C
0.2
mA
TA = 100°C
10
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.



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