P4C147 datasheet(1/10 Pages) PYRAMID

Teilenummer	P4C147

Bauteilbeschribung	ULTRA HIGH SPEED 4K x 1 STATIC CMOS RAM

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Hersteller	PYRAMID [Pyramid Semiconductor Corporation]

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Document # SRAM103 REV A

Revised October 2005

P4C147

ULTRA HIGH SPEED 4K x 1

STATIC CMOS RAM

FEATURES

Full CMOS, 6T Cell

High Speed (Equal Access and Cycle Times)

– 10/12/15/20/25 ns (Commercial)

– 15/20/25/35 ns (Military)

Low Power Operation

– 715 mW Active

–10 (Commercial)

– 550 mW Active

–25 (Commercial)

– 110 mW Standby (TTL Input)

– 55 mW Standby (CMOS Input)

Single 5V ± 10% Power Supply

Separate Input and Output Ports

Three-State Outputs

Fully TTL Compatible Inputs and Outputs

Standard Pinout (JEDEC Approved)

– 18 Pin 300 mil DIP

– 18 Pin CERPACK

– 18 Pin LCC (290 x 430 mils)

– 18 Pin LCC (295 x 335 mils)

DESCRIPTION

The P4C147 is a 4,096-bit ultra high speed static RAM

organized as 4K x 1. The CMOS memory requires no

clocks or refreshing, and have equal access and cycle

times. InputsarefullyTTL-compatible. TheRAMoperates

from a single 5V ± 10% tolerance power supply.

Access times as fast as 10 nanoseconds are available,

permitting greatly enhanced system operating speeds.

CMOS is utilized to reduce power consumption in both

active and standby modes. In addition to very high

performance, this device features latch-up protection

and single-event-upset protection.

The P4C147 is available in 18 pin 300 mil DIP packages,

an 18-pin CERPACK package, and 2 different LCC

packages.

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATIONS

DIP (P1, D1, C9),

CERPACK (F1) SIMILAR

LCC (L7, L7-1)

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