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BYQ30EB-150 Datenblatt(PDF) 1 Page - Inchange Semiconductor Company Limited |
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BYQ30EB-150 Datenblatt(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page ![]() Ultrafast Rectifier Diode BYQ30EB-150 www.iscsemi.com 1 FEATURES · Low Switching Losses · Low Leakage Current · Ultrafast recovery time APPLICATIONS · PFC · Switched-mode power supplies · High frequency circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Reverse voltage Crest Working Reverse Voltage Continuous Reverse Voltage 150 V IF(AV) Average Rectified Forward Current(both diodes conducting) Square;δ = 0.5; TC ≤ 104 ˚C 16 A IFSM Non-repetitive Peak Surge Current per Diode t=10ms 80 A TJ Max. Junction Temperature 150 ℃ Tstg Storage Temperature Range -40~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case both diodes 2.5 ℃ /W 2 2 3 1 |
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Ähnliche Beschreibung - BYQ30EB-150 |
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