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P4C1256 Datenblatt(PDF) 3 Page - Pyramid Semiconductor Corporation

Teilenummer P4C1256
Bauteilbeschribung  HIGH SPEED 32K x 8 STATIC CMOS RAM
PDF  17 Pages
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Hersteller  PYRAMID [Pyramid Semiconductor Corporation]
Direct Link  http://www.pyramidsemiconductor.com
Logo PYRAMID - Pyramid Semiconductor Corporation

P4C1256 Datenblatt(HTML) 3 Page - Pyramid Semiconductor Corporation

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P4C1256
Page 3 of 17
Document # SRAM119 REV G
*V
CC = 5.5V. Tested with outputs open. f = Max. Switching inputs are 0V and 3V. CE = VIL, OE = VIH.
I
CC
Symbol
Parameter
Temperature
Range
Dynamic Operating Current*
Commercial
Industrial
Military
N/A
N/A
–15
N/A
–12
–20
–25
–35
–45
–55
–70
Unit
N/A
mA
mA
mA
POWER DISSIPATION CHARACTERISTICS VS. SPEED
N/A
N/A
N/A
N/A
170
160
170
155
165
170
150
145
160
155
150
150
150
155
160
165
DATA RETENTION CHARACTERISTICS (P4C1256L Military Temperature Only)
Symbol
V
DR
I
CCDR
t
CDR
t
R
†
Parameter
V
CC for Data Retention
Data Retention Current
Chip Deselect to
Data Retention Time
Operation Recovery Time
Test Conditons
CE
≥ V
CC –0.2V,
V
IN ≥ VCC –0.2V
or V
IN ≤ 0.2V
Min
2.0
0
t
RC
§
Typ.*
V
CC =
2.0V
3.0V
Max
V
CC =
2.0V
3.0V
Unit
10
15
100
200
V
µA
ns
ns
*T
A = +25°C
§t
RC = Read Cycle Time
† This parameter is guaranteed but not tested.
DATA RETENTION WAVEFORM



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