TIP131 datasheet(2/6 Pages) POINN

2 / 6 page

TIP130, TIP131, TIP132

NPN SILICON POWER DARLINGTONS

JUNE 1973 - REVISED MARCH 1997

PRODUCT

INFORMATION

NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.

6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.

electrical characteristics at 25°C case temperature

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

V(BR)CEO

Collector-emitter

breakdown voltage

IC = 30 mA

IB = 0

(see Note 5)

TIP130

TIP131

TIP132

100

ICEO

Collector-emitter

cut-off current

VCE = 30 V

VCE = 40 V

VCE = 50 V

IB = 0

TIP130

TIP131

TIP132

0.5

ICBO

Collector cut-off

current

VCB = 60 V

VCB = 80 V

VCB = 100 V

VCB = 60 V

VCB = 80 V

VCB = 100 V

IE = 0

TC = 100°C

TIP130

TIP131

TIP132

TIP130

TIP131

TIP132

0.2

IEBO

Emitter cut-off

current

VEB =

5 V

IC = 0

hFE

Forward current

transfer ratio

VCE =

4 V

VCE =

4 V

IC = 1 A

IC = 4 A

(see Notes 5 and 6)

500

1000

15000

VCE(sat)

Collector-emitter

saturation voltage

IB =

16 mA

IB =

30 mA

IC = 4 A

IC = 6 A

(see Notes 5 and 6)

VBE

Base-emitter

voltage

VCE =

4 V

IC = 4 A

(see Notes 5 and 6)

2.5

Cobo

Output capacitance

VCB = 10 V

IE = 0

200

VEC

Parallel diode

forward voltage

IE =

8 A

IB = 0

(see Notes 5 and 6)

3.5

thermal characteristics

PARAMETER

MIN

TYP

MAX

UNIT

RθJC

Junction to case thermal resistance

1.78

°C/W

RθJA

Junction to free air thermal resistance

62.5

°C/W

TIP131 Datenblatt(PDF) 2 Page - Power Innovations Ltd

TIP131 Datenblatt(HTML) 2 Page - Power Innovations Ltd

Html Pages

1 2 3 4 5 6

Datenblatt Download

Link URL