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STC4350F Datenblatt(PDF) 2 Page - AUK corp

Teilenummer STC4350F
Bauteilbeschribung  NPN Silicon Transistor
PDF  4 Pages
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Hersteller  AUK [AUK corp]
Direct Link  https:www.auk.co.kr
Logo AUK - AUK corp

STC4350F Datenblatt(HTML) 2 Page - AUK corp

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KSD-T5B008-001
2
STC4350F
Absolute Maximum Ratings
[Ta=25℃]
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
6
V
Collector current
IC
3
A
PC
0.5
W
Collector Power dissipation
PC
※
1
W
Junction temperature
TJ
150
°C
Storage temperature range
Tstg
-55~150
°C
※
Device mounted on ceramic substrate (250mm2ⅹ0.8t)
Electrical Characteristics
[Ta=25℃]
Characteristic
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Collector-emitter breakdown voltage
BVCEO
IC=10mA, IB=0
50
-
-
V
Collector cut-off current
ICBO
VCB=60V, IE=0
-
-
0.1
μA
Emitter cut-off current
IEBO
VEB=6V, IC=0
-
-
0.1
μA
hFE
VCE=2V, IC=0.1A*
120
-
240
DC current gain
hFE
VCE=2V, IC=2A*
40
-
-
Collector-emitter saturation voltage
VCE(sat)
IC=2A, IB=0.1A*
-
-
0.35
V
Base-emitter saturation voltage
VBE(sat)
IC=2A, IB=0.1A*
-
-
1.2
V
Transition frequency
fT
VCE=10V, IC=0.05A
-
210
-
MHz
Collector output capacitance
Cob
VCB=10V, IE=0, f=1MHz
-
18
-
pF
Turn-on Time
ton
-
100
-
Storage Time
tstg
-
300
-
Switching
Time
Fall Time
tf
-
50
-
nS
*: Pulse test : tP≤300µs, Duty cycle≤2%
※
Recommend PCB solder land
[Unit: mm]
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