P2006AS datasheet(2/6 Pages) ADV

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P2006AS

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Ver.0.10

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Electrical Characteristics (TA=25°C Unless Otherwise Noted)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

On/off

Characteristics

BVDSS

Drain-Source Breakdown Voltage

VGS=0V, IDS=-250uA

-20

IDSS

Zero Gate Voltage Drain Current

VDS= -20V, VGS=0V

-1

VGS(th)

Gate Threshold Voltage

VDS=VGS, IDS=-250uA

-0.45

-1.0

IGSS

Gate Leakage Current

VGS=±12V, VDS=0V

100

RDS(ON)

Drain-SourceOn-stateResistance⑵

VGS= -2.5V, IDS=-10A

6.0



VGS= -4.5V, IDS=-20A

4.8

gFS

Forward transconductance⑵

VDS=- 10V, IDS=-20A

Dynamic Characteristics

Ciss

Input Capacitance

VGS=0V,

VDS= -10V,

Frequency=1.0MHz

3000

Coss

Output Capacitance

650

Crss

Reverse Transfer Capacitance

500

Switching Characteristics

td(ON)

Turn-on Delay Time⑴

VDS =-10V,

ID= -1A, VGS= -4.5V,

RGEN=6Ω

Turn-on Rise Time⑴

td(OFF)

Turn-off Delay Time⑴

110

Turn-off Fall Time⑴

Total Gate Charge⑴

VDS=-10V, VGS= -4.5V,

IDS=-10A

55.0

Qgs

Gate-Source Charge⑴

Qgd

Gate-Drain Charge⑴

Diode Characteristics

VSD

Diode Forward Voltage⑵

ISD = -35A, VGS = 0

-1.2

NOTES:

Independent of operating temperature.

Pulse Test : Pulse width ≤ 300μs, Duty cycle ≤ 2%

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