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ARF370S45 Datenblatt(PDF) 4 Page - Power Semiconductors |
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ARF370S45 Datenblatt(HTML) 4 Page - Power Semiconductors |
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4 / 4 page ![]() ARF370 FAST RECOVERY DIODE FINAL SPECIFICATION feb 97 - ISSUE : 04 Distributed by FORWARD CHARACTERISTIC Tj = 150 °C 0 200 400 600 800 1000 1200 1400 1600 1.5 2.5 3.5 4.5 Forward Voltage [V] TRANSIENT THERMAL IMPEDANCE DOUBLE SIDE COOLED 0.0 10.0 20.0 30.0 40.0 50.0 60.0 0.001 0.01 0.1 1 10 100 t[s] SURGE CHARACTERISTIC Tj = 150 °C 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 1 10 100 n° cycles All the characteristics given in this data sheet are guaranteed only with uniform clamping force, cleaned and lubricated heatsink, surfaces with flatness < .03 mm and roughness < 2 µm. In the interest of product improvement POSEICO SPA reserves the right to change any data given in this data sheet at any time without previous notice. If not stated otherwise the maximum value of ratings (simbols over shaded background) and characteristics is reported. POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO |
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