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2N6660 Datenblatt(PDF) 2 Page - Supertex, Inc |
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2N6660 Datenblatt(HTML) 2 Page - Supertex, Inc |
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2 / 3 page ![]() 2 2N6660/2N6661 Electrical Characteristics (T C = 25°C unless otherwise specified) Symbol Parameter Min Typ Max Units Conditions BV DSS Drain-to-source break- down voltage 2N6660 60 - - VV GS = 0V, ID = 10µA 2N6661 90 - - V GS(th) Gate threshold voltage 0.8 - 2.0 V V GS = VDS, ID = 1.0mA ΔV GS(th) V GS(th) change with temperature - -3.8 -5.5 mV/OCV GS = VDS, ID = 1.0mA I GSS Gate body leakage current - - 100 nA V GS = ±20V, VDS = 0V I DSS Zero gate voltage drain current -- 10 µA V GS = 0V, VDS = Max rating - - 500 V DS = 0.8 Max Rating, V GS = 0V, TA = 125 OC I D(ON) ON-state drain current 1.5 - - A V GS = 10V, VDS = 10V R DS(ON) Static drain-to-source ON-state resistance All - - 5.0 Ω V GS = 5.0V, ID = 0.3A 2N6660 - - 3.0 V GS = 10V, ID = 1.0A 2N6661 - - 4.0 V GS = 10V, ID = 1.0A G FS Forward transconductance 170 - - mmho V DS = 25V, ID = 0.5A C ISS Input capacitance - - 50 pF V GS = 0V, V DS = 24V, f = 1.0MHz C OSS Common source output capacitance - - 40 C RSS Reverse transfer capacitance - - 10 t (ON) Turn-ON time - - 10 ns V DD = 25V, ID = 1.0A, R GEN = 25Ω t (OFF) Turn-OFF time - - 10 V SD Diode forward voltage drop - 1.2 - V V GS = 0V, ISD = 1.0A t rr Reverse recovery time - 350 - ns V GS = 0V, ISD = 1.0A Notes: 1.All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2.All A.C. parameters sample tested. Switching Waveforms and Test Circuit Thermal Characteristics Device Package I D (continuous)* (mA) I D (pulsed) (A) Power Dissipation @T C = 25 OC (W) θ jc ( OC/W) θ ja ( OC/W) I DR * (mA) I DRM (A) 2N6660 TO-39 410 3.0 6.25 20 125 410 3.0 2N6661 TO-39 350 3.0 6.25 20 125 350 3.0 Notes: * I D (continuous) is limited by max rated TJ. 90% 10% 90% 90% 10% 10% PULSE GENERATOR VDD RL OUTPUT D.U.T. t (ON) t d(ON) t (OFF) t d(OFF) t F t r INPUT INPUT OUTPUT 10V V DD RGEN 0V 0V |
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