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INA821 Datenblatt(PDF) 8 Page - Texas Instruments

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Teilenummer INA821
Bauteilbeschribung  PGA849 Low-Noise, Wide-Bandwidth, Precision Programmable Gain Instrumentation Amplifier
PDF  40 Pages
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Hersteller  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

INA821 Datenblatt(HTML) 8 Page - Texas Instruments

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6.6 Typical Characteristics
at TA = 25°C, VS = VSOUT = ±15V, VICM = VREF = 0V, RL = 10kΩ connected to ground, and G =1V/V (unless otherwise noted)
Input Referred Offset Voltage (mV)
0
5
10
15
20
25
-4
-3
-2
-1
0
1
2
3
4
N = 1767
Mean = –165.34µV
Std. dev. = 600.90µV
G = 0.125V/V
Figure 6-1. Distribution of Offset Voltage (RTI)
Input Referred Offset Voltage ( V)
0
5
10
15
-400
-300
-200
-100
0
100
200
300
400
N = 1767
Mean = –22.56µV
Std. dev. = 78.45µV
G = 1V/V
Figure 6-2. Distribution of Offset Voltage (RTI)
Input Referred Offset Voltage ( V)
0
5
10
15
20
-400
-300
-200
-100
0
100
200
300
400
N = 1767
Mean = –37.55µV
Std. dev. = 48.69µV
G = 16V/V
Figure 6-3. Distribution of Offset Voltage (RTI)
N = 58
1 wafer lot
G = 0.125V/V
Figure 6-4. Offset Voltage (RTI) vs Temperature
N = 58
1 wafer lot
G = 1V/V
Figure 6-5. Offset Voltage (RTI) vs Temperature
N = 58
1 wafer lot
G = 16V/V
Figure 6-6. Offset Voltage (RTI) vs Temperature
PGA849
SBOSAG3A – MARCH 2024 – REVISED DECEMBER 2024
www.ti.com
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Copyright © 2024 Texas Instruments Incorporated
Product Folder Links: PGA849



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