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INA821 Datenblatt(PDF) 8 Page - Texas Instruments |
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INA821 Datenblatt(HTML) 8 Page - Texas Instruments |
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8 / 40 page ![]() 6.6 Typical Characteristics at TA = 25°C, VS = VSOUT = ±15V, VICM = VREF = 0V, RL = 10kΩ connected to ground, and G =1V/V (unless otherwise noted) Input Referred Offset Voltage (mV) 0 5 10 15 20 25 -4 -3 -2 -1 0 1 2 3 4 N = 1767 Mean = –165.34µV Std. dev. = 600.90µV G = 0.125V/V Figure 6-1. Distribution of Offset Voltage (RTI) Input Referred Offset Voltage ( V) 0 5 10 15 -400 -300 -200 -100 0 100 200 300 400 N = 1767 Mean = –22.56µV Std. dev. = 78.45µV G = 1V/V Figure 6-2. Distribution of Offset Voltage (RTI) Input Referred Offset Voltage ( V) 0 5 10 15 20 -400 -300 -200 -100 0 100 200 300 400 N = 1767 Mean = –37.55µV Std. dev. = 48.69µV G = 16V/V Figure 6-3. Distribution of Offset Voltage (RTI) N = 58 1 wafer lot G = 0.125V/V Figure 6-4. Offset Voltage (RTI) vs Temperature N = 58 1 wafer lot G = 1V/V Figure 6-5. Offset Voltage (RTI) vs Temperature N = 58 1 wafer lot G = 16V/V Figure 6-6. Offset Voltage (RTI) vs Temperature PGA849 SBOSAG3A – MARCH 2024 – REVISED DECEMBER 2024 www.ti.com 8 Submit Document Feedback Copyright © 2024 Texas Instruments Incorporated Product Folder Links: PGA849 |
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